Process control system, process control method, and method of manufacturing electronic apparatus

ABSTRACT

A process control system includes a client computer which prepares a correlation between a reference monitored value of apparatus information and a feature quantity, a manufacturing execution system which prepares a processing recipe describing, as a first setting value in an actual manufacturing process, a value of the control parameter, an apparatus information collection section which collects an objective monitored value of the apparatus information in operation of the actual manufacturing process with the first setting value, a feature quantity calculation section which calculates a value of a feature quantity corresponding to the objective monitored value based on the correlation, a parameter calculation section which calculates a second setting value in the actual manufacturing process on the basis of the value of the feature quantity, and an apparatus control unit which changes the processing recipe with the second setting value being as a setting value of the second step.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromprior Japanese Patent Applications No. 2005-180659, filed Jun. 21, 2005;and No. 2005-272019, filed Sep. 20, 2005, the entire contents of both ofwhich are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a process of manufacturing anelectronic apparatus, and in particular, to a process control systemwhich controls a manufacturing process, a process control method, and amethod of manufacturing an electronic apparatus.

2. Description of the Related Art

In order to realize high-performance electronic apparatuses, amanufacturing process with high accuracy, uniformity, andreproducibility is required. In electronic apparatuses such assemiconductor integrated circuits (ICs) and liquid crystal displays(LCDs), miniaturization and multilayer manufacturing have progressed,and a level of integration has been increased dramatically in order toachieve high-functionality and high-speed performance. For example, insemiconductor apparatuses such as large-scale integrated circuits(LSIs), which are formed of multi-layered micropatterns, it has beenmade difficult to control the manufacturing process in accordance withthe miniaturization thereof. Therefore, an attempt has been made toimprove process capability run-to-run (RTR) control by which feedforward(FF) control or feedback (FB) control is carried out between processesor in a process (for example, refer to Jpn. Pat. Appln. KOKAIPublication Nos. 10-275753, 2000-252179 and 2002-151465).

For example, in a trench capacitor manufacturing process, a deep trenchis filled up by depositing an amorphous silicon (a-Si) film on thesurface of a substrate having a deep trench formed thereon by chemicalvapor deposition (CVD) or the like. Thereafter, the a-Si film is etchedto a-predetermined depth by recess etching such as reactive ion etching(RIE). Usually, the depth of the recess is controlled by controlling anetching time of RIE. In order to control the recess depth precisely, anetching end-point of the a-Si film deposited on the surface of thesubstrate is detected. An etching rate is calculated on the basis of anend-point detection time from a start of etching to an end-pointdetection. An etching time for the a-Si film embedded in the deep trenchis determined on the basis of a calculated etching rate.

However, an end-point detection time is influenced by not only anetching rate but also a thickness of a deposited a-Si film. Unevennessin a deposited film thickness is brought about among substrates or lotsdue to variations in CVD conditions for a-Si films. For this reason,even if an etching time for an a-Si film embedded in a deep trench iscontrolled on the basis of an end-point detection time, a recess depthcannot be controlled with high accuracy. As a result, the processcapability for manufacturing a trench-capacitor is reduced, whichdegrades a manufacturing yield.

Also, conventionally, in manufacture of semiconductor apparatuses, aparameter varying every run with respect to a process having a poorcapability, for example, an etching rate or the like, is detected byquality control (QC) measurement after the process is completed. Theprocess capability is improved to thereby increase a yield ofsemiconductor chips by RTR control using a QC measurement value.

There are cases in which a QC measurement value of a parameter varyingevery run is made to be an abnormal value different from a tendency ofthe lot in some of wafers in a lot during processing. Because QCmeasurement is not carried out on all the wafers in the lot, abnormalvalues brought about in some of wafers cannot be detected. When such aQC measurement value including an abnormal value is used, FB control orthe like does not function effectively. As a result, improvement incontrol accuracy is made insufficient, which degrades a yield ofsemiconductor apparatus.

BRIEF SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided aprocess control system comprising:

a client computer which prepares a correlation between a referencemonitored value of apparatus information indicating a processing stateof a manufacturing apparatus in a reference manufacturing process withrespect to a reference wafer, and a feature quantity obtained from acontrol parameter for controlling the manufacturing apparatus and afinished form in the reference manufacturing process;

a manufacturing execution system which prepares a processing recipedescribing, as a first setting value of a first step in an actualmanufacturing process with respect to an objective wafer, a value of thecontrol parameter calculated on the basis of a dimension of a processingobjective structure in the actual manufacturing process;

an apparatus information collection section which collects an objectivemonitored value of the apparatus information from the manufacturingapparatus in operation of the actual manufacturing process with thefirst setting value;

a feature quantity calculation section which calculates a value of afeature quantity corresponding to the objective monitored value on thebasis of the correlation;

a parameter calculation section which calculates a second setting valueof a second step in the actual manufacturing process following the firststep of the actual manufacturing process on the basis of the value ofthe feature quantity corresponding to the objective monitored value; and

an apparatus control unit which changes the processing recipe with thesecond setting value being as a setting value of the second step.

According to another aspect of the present invention, there is provideda process control system comprising:

a monitor unit which monitors apparatus information indicating aprocessing state of a manufacturing apparatus;

an apparatus information collection unit which collects a monitoredvalue of the apparatus information from the monitor unit in operation ofa manufacturing process;

a correlation preparation unit which prepares a correlation between atest monitored value of the apparatus information in a testmanufacturing process with respect to a test wafer, and a featurequantity obtained from a processing parameter for controlling themanufacturing apparatus and a finished form in the test manufacturingprocess;

a process management unit which calculates a setting value of theprocessing parameter in the objective manufacturing process on the basisof at least one of a plurality of estimated values of the featurequantity and a dimension of a processing objective structure in anobjective manufacturing process with respect to an objective wafer, saidplurality of estimated values being calculated on the basis of thecorrelation with respect to a plurality of reference monitored values ofthe apparatus information except for abnormal values in a distributionof said plurality of reference monitored values in a referencemanufacturing process with respect to a plurality of reference wafers;and

an apparatus control unit which controls the manufacturing apparatus inaccordance with a processing recipe having the setting value describedin a processing step in the objective manufacturing process.

According to a further aspect of the present invention, there isprovided a process control method comprising:

preparing, by a client computer, a correlation between a referencemonitored value of apparatus information indicating a processing stateof a manufacturing apparatus in a reference manufacturing process withrespect to a reference wafer, and a feature quantity obtained from acontrol parameter for controlling the manufacturing apparatus and afinished form in the reference manufacturing process;

preparing, by a manufacturing execution system, a processing recipedescribing, as a setting value of a first step in an actualmanufacturing process with respect to an objective wafer, a firstsetting value of the control parameter calculated on the basis of adimension of a processing objective structure in the actualmanufacturing process;

collecting, by an apparatus information collection section, an objectivemonitored value of the apparatus information from the manufacturingapparatus in operation of the actual manufacturing process with thefirst setting value;

calculating, by a feature quantity calculation section, a value of afeature quantity corresponding to the objective monitored value on thebasis of the correlation;

calculating, by a parameter calculation section, a second setting valueof a second step in the actual manufacturing process following the firststep in the actual manufacturing process on the basis of the value ofthe feature quantity corresponding to the objective monitored value; and

changing, by an apparatus control unit, the processing recipe with thesecond setting value being as a setting value of the second step.

According to a still further aspect of the present invention, there isprovided a process control method comprising:

preparing, by executing a test manufacturing process with respect to atest wafer, a correlation between a test monitored value of apparatusinformation indicating a processing state of a manufacturing apparatusand a feature quantity obtained from a processing parameter forcontrolling the manufacturing apparatus and a finished form in the testmanufacturing process;

acquiring, by executing a reference manufacturing process with respectto a plurality of reference wafers, a plurality of reference monitoredvalues of the apparatus information with respect to said plurality ofreference wafers;

determining abnormal values in a distribution of said plurality ofreference monitored values;

calculating on the basis of the correlation a plurality of estimatedvalues of the feature quantity respectively corresponding to saidplurality of reference monitored values except for the abnormal values;

calculating a setting value of the processing parameter in the objectivemanufacturing process on the basis of a dimension of a processingobjective structure in an objective manufacturing process with respectto an objective wafer, and at least one of said plurality of estimatedvalues; and

preparing a processing recipe having the setting value described in aprocessing step in the objective manufacturing process.

According to a yet further aspect of the present invention, there isprovided a method of manufacturing an electronic apparatus, comprising:

preparing, by executing a reference manufacturing process onto areference wafer, a correlation between a reference monitored value ofapparatus information indicating a processing state of a manufacturingapparatus, and a feature quantity obtained from a control parameter forcontrolling the manufacturing apparatus and a finished form in thereference manufacturing process;

preparing a processing recipe describing, as a first setting value of afirst step in an actual manufacturing process with respect to anobjective wafer, a value of the control parameter calculated on thebasis of a dimension of a processing objective structure in the actualmanufacturing process;

collecting an objective monitored value of the apparatus informationfrom the manufacturing apparatus in operation of the actualmanufacturing process with the first setting value;

calculating a value of a feature quantity corresponding to the objectivemonitored value on the basis of the correlation;

calculating a second setting value of a second step in the actualmanufacturing process following the first step in the actualmanufacturing process on the basis of the value of the feature quantitycorresponding to the objective monitored value;

changing the processing recipe with the second setting value being as asetting value of the second step; and

processing the objective lot by the manufacturing apparatus.

According to a more aspect of the present invention, there is provided amethod of manufacturing an electronic apparatus, comprising:

preparing, by executing a test manufacturing process with respect to atest wafer, a correlation between a test monitored value of apparatusinformation indicating a processing state of a manufacturing apparatus,and a feature quantity obtained from a processing parameter forcontrolling the manufacturing apparatus and a finished form in the testmanufacturing process;

collecting, by executing a reference manufacturing process with respectto a plurality of reference wafers, a plurality of reference monitoredvalues of the apparatus information with respect to said plurality ofreference wafers;

determining abnormal values in a distribution of said plurality ofreference monitored values;

calculating on the basis of the correlation a plurality of estimatedvalues of the feature quantity respectively corresponding to saidplurality of reference monitored values except for the abnormal values;

calculating a setting value of the processing parameter in the objectivemanufacturing process on the basis of a dimension of a processingobjective structure in an objective manufacturing process with respectto an objective wafer, and at least one of said plurality of estimatedvalues;

preparing a processing recipe having the setting value described in aprocessing step in the objective manufacturing process; and

processing the objective wafer by the manufacturing apparatus inaccordance with the processing recipe.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a diagram showing an exemplary configuration of a processcontrol system according to a first embodiment of the present invention;

FIG. 2 is a chart showing an example of a process flow for asemiconductor device for use in explanation of the first embodiment ofthe present invention;

FIG. 3 is a cross-sectional view of a device structure in amanufacturing process for a semiconductor device, for use in explanationof the first embodiment of the present invention;

FIG. 4 is a cross-sectional view of a device structure in amanufacturing process for the semiconductor device following the processof FIG. 3, for use in explanation of the first embodiment of the presentinvention;

FIG. 5 is a cross-sectional view of a device structure in amanufacturing process for the semiconductor device following the processof FIG. 4, for use in explanation of the first embodiment of the presentinvention;

FIG. 6 is a graph showing an example of differences in feature quantityamong wafers, for use in explanation of the first embodiment of thepresent invention;

FIG. 7 is a graph showing an example of a correlation between anapparatus parameter and a feature quantity for use in a process controlmethod according to the first embodiment of the present invention;

FIG. 8 is a graph showing an example of a processing time of aprocessing recipe for use in the process control method according to thefirst embodiment of the present invention;

FIG. 9 is a graph showing another example of the processing time of theprocessing recipe for use in the process control method according to thefirst embodiment of the present invention;

FIG. 10 is a flowchart showing an example of the process control methodaccording to the first embodiment of the present invention;

FIG. 11 is a chart showing an example of a process flow for thesemiconductor device, for use in explanation of a modified example ofthe first embodiment of the present invention;

FIG. 12 is a cross-sectional view of a device structure in amanufacturing process for a semiconductor device, for use in explanationof a modified example of the first embodiment of the present invention;

FIG. 13 is a cross-sectional view of a device structure in amanufacturing process for the semiconductor device following the processof FIG. 12, for use in explanation of the modified example of the firstembodiment of the present invention;

FIG. 14 is a cross-sectional view of a device structure in amanufacturing process for the semiconductor device following the processof FIG. 13, for use in explanation of the modified example of the firstembodiment of the present invention;

FIG. 15 is a diagram showing an exemplary configuration of a processcontrol system according to a second embodiment of the presentinvention;

FIG. 16 is a graph showing an example of a correlation between anapparatus parameter and a feature quantity for use in a process controlmethod according to the second embodiment of the present invention;

FIG. 17 is a flowchart showing an example of the process control methodaccording to the second embodiment of the present invention;

FIG. 18 is a diagram showing an exemplary configuration of a processcontrol system according to a third embodiment of the present invention;

FIG. 19 is a graph showing an example of a correlation between anapparatus parameter and a feature quantity for use in a process controlmethod according to the third embodiment of the present invention; and

FIG. 20 is a flowchart showing an example of the process control methodaccording to the third embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described withreference to the drawings. In the following descriptions of thedrawings, portions which are the same or similar to one another aredenoted by the same or similar reference numbers. However, the drawingsare typical, and attention is to be paid to the fact that a relationshipbetween a thickness and a planar dimension, a ratio among thicknesses ofrespective layers, and the like are different from those in reality.Accordingly, specific thicknesses and dimensions are to be judged inconsideration of the following descriptions. Further, it goes withoutsaying that portions in which a relationship and a ratio amongrespective dimensions are different from one another are included amongthe respective drawings.

First Embodiment

A process control system according to a first embodiment of the presentinvention comprises, as shown in FIG. 1, a parameter processing unit 10,a process management server 12, a manufacturing execution system 14, aclient computer 15, a manufacturing apparatus 16, a monitor unit 18, anapparatus control unit 20, a quality control apparatus 22, an apparatusinformation database 24, a quality control database 26, and a processinginformation database 28, etc. Further, the parameter processing unit 10includes an input section 30, an apparatus information collectionsection 32, a determination section 34, a feature quantity calculationsection 36, a parameter calculation section 38, an output section 40, aninternal memory 42, etc.

The parameter processing unit 10, the process management server 12, themanufacturing execution system 14, the client computer 15, the apparatuscontrol unit 20, the quality control apparatus 22, the apparatusinformation database 24, the quality control database 26, the processinginformation database 28, and the like are connected to one another viacommunication lines 50 such as a local area network (LAN). Themanufacturing apparatus 16 is connected to the parameter processing unit10 via the monitor unit 18 and the apparatus control unit 20, etc.

For example, a manufacturing process for a semiconductor device isexecuted by manufacturing apparatus 16 under control of the apparatuscontrol unit 20. The apparatus control unit 20 acquires from themanufacturing execution system 14 a processing recipe in whichprocessing conditions for the manufacturing process such as settingvalues of a processing parameters of the manufacturing apparatus and thelike are described. The manufacturing apparatus 16 includes, forexample, a reactive ion etching (RIE) device, a chemical vapordeposition (CVD) device, a deposition device, an ion implantationdevice, a photolithography system, and the like. Examples of theprocessing parameters include a time, a temperature, a flow rate, and apressure.

Further, the monitor unit 18 installed on the manufacturing apparatus 16monitors apparatus information indicating a processing state of themanufacturing apparatus 16 in operation for a manufacturing process.Examples of the apparatus information include, in a case of an RIEdevice, an upper electrode position of a variable capacitor of ahigh-frequency oscillator matching circuit (hereinafter referred to as acapacitor electrode position), a chamber temperature, and an opening ofan exhaust valve. The apparatus information collected at the monitorunit 18 are transmitted to the parameter processing unit 10. Inaddition, the apparatus information are stored in the apparatusinformation database 24 after wafer numbers of semiconductor devicesprocessed in the manufacturing apparatus 16 are added to the apparatusinformation.

The quality control apparatus 22 measures quality control measurementvalues of a finished form and the like after a plurality ofmanufacturing processes executed at the manufacturing apparatus 16 andthe like are respectively completed. Examples of the quality controlapparatus 22 include a scanning electron microscope (SEM), a lasermicroscope, a step meter, and a film thickness meter. Examples ofquality control measurement values include finished dimensions such as awidth of a resist pattern formed by photolithography or the like, awidth and a depth of a pattern etched by RIE or the like, and athickness of a film deposited by CVD or the like. Further, processedforms such as sidewall angles and line edge roughness (LER) of a resistpatter or a line pattern formed by using a resist pattern as a mask areincluded in quality control measurement values. Quality control dataincluding quality control measurement values measured in the qualitycontrol apparatus 22 are stored in the quality control database 24 alongwith wafer numbers, processing times and setting values of otherprocessing parameters.

The client computer 15 investigates a correlation between apparatusinformation and a feature quantity in a manufacturing process. Forexample, the client computer 15 acquires from the apparatus informationdatabase 24 and the quality control database 26.a monitored value ofapparatus information, a quality control measurement value, and aprocessing time, etc., with a wafer number of a wafer on which themanufacturing process has been executed in advance in the manufacturingapparatus 16 being as an index. A correlation equation between theapparatus information and the feature quantity is prepared bycalculating a feature quantity on the basis of a processing time and aquality control measurement value. As a feature quantity, for example, aslimming rate or an etching rate in RIE, a deposition rate in CVD, orthe like is calculated.

The process management server 12 calculates a target value for theprocessing on the basis of the quality control measurement valuesaccording to a finished form of a processing objective structure in theobjective manufacturing process among finishes of the manufacturingprocesses, which have been executed before an objective manufacturingprocess. Further, with respect to a wafer on which the objectivemanufacturing process has been executed immediately before an objectivewafer, a feature quantity in the objective manufacturing process iscalculated. The calculated target value and feature quantity aretransmitted to the manufacturing execution system 14.

The manufacturing execution system 14 calculates a processing timerequired for the manufacturing process on the basis of the acquiredtarget value and feature quantity for the processing. Processspecifications for the objective manufacturing process stored in advancein the processing information database 28 are acquired, and theprocessing for the objective manufacturing process is divided into firstand second steps to prepare a processing recipe. In the first and secondsteps, first and second setting values obtained by dividing a value ofthe calculated processing time into two are described. As the firststep, not only a processing step of the manufacturing process, but alsoa preliminary step needed for the manufacturing process is included.Moreover, in the processing recipe, there are described items ofapparatus information to be monitored, collection conditions forapparatus information such as a sampling rate, a computational procedureof a feature quantity in the manufacturing process, and the like. Theprocessing recipe is transmitted to the parameter processing unit 10 andthe apparatus control unit 20.

The input section 30 of the parameter processing unit 10 acquires acorrelation between the apparatus information and feature quantitytransmitted from the client computer 15, and the processing recipetransmitted from the manufacturing execution system 14. After themanufacturing apparatus 16 starts the processing of the first step inthe manufacturing process in accordance with the processing recipe undercontrol of the apparatus control unit 20, the apparatus informationcollection section 32 collects from the monitor unit 18 monitored valuesof the apparatus information of the manufacturing apparatus 16 inaccordance with the collection conditions described in the processingrecipe.

The feature quantity calculation section 36 calculates a featurequantity corresponding to the monitored values of the apparatusinformation on the basis of a correlation between apparatus informationand a feature quantity. The parameter calculation section 38 calculatesa new setting value of a processing time for the second step on thebasis of the calculated feature quantity and the target value describedin the processing recipe. The output section 40 transmits the calculatednew setting value to the apparatus control unit 20. The internal memory42 temporarily stores data in process of calculating or in process ofanalyzing in an operation in the parameter processing unit 10.

The apparatus control unit 20 changes the processing recipe bydescribing the received new setting value as a processing time for thesecond step. The processing of the manufacturing process is controlledin accordance with the changed processing recipe. If a processing timefor the second step is not transmitted until the first step iscompleted, the processing recipe is rewritten by adding an additionalstep after the first step. When an additional step is added, aprocessing time for the second step is rewritten by subtracting aprocessing time for the additional step from the processing time for thesecond step.

In accordance with the process control system according to the firstembodiment of the present invention, the processing for the second stepin the manufacturing process is controlled on the basis of a featurequantity calculated in the first step. Accordingly, the processing inthe manufacturing process can be controlled with high accuracy, whichmakes it possible to improve the process capability and a manufacturingyield.

In the first embodiment of the present invention, a semiconductordevice, for example, a logic product, under the 90 nm design rule, ismanufactured. For ease of explanation, as an example of a manufacturingprocess to be controlled, there will be described a slimming RIE processin which a width of a resist pattern as a gate electrode forming etchingmask of a metal-oxide-semiconductor (MOS) transistor is reduced, byusing the process flowchart of FIG. 2 and the process cross-sectionalviews of FIG. 3 to FIG. 5. A gate length as a gate processed dimensionof the MOS transistor is 30 nm.

(a) An oxide film 61 of silicon oxide (SiO₂) or the like is formed bythermal oxidation, etc. on a substrate (wafer) 60. A poly-Si film 62 isdeposited on the oxide film 61 by a polycrystalline silicon (poly-Si)chemical vapor deposition (CVD) process in step S160. An antireflectioncoating (ARC) film 63 of silicon oxynitride (SiON), silicon nitride(Si₃N₄), titanium nitride (TiN), or the like is deposited on the poly-Sifilm 62 by an ARCCVD process in step S161.

(b) As shown in FIG. 3, a resist pattern 64 is formed on a surface ofthe ARC film 63, using a photolithography process in step S162. A resistwidth Wr of the resist pattern 64 is measured by the quality controlapparatus 22 such as a scanning electron microscope (SEM) in a qualitycontrol process in step S163.

(c) Etching (slimming RIE) onto the resist pattern 64 and the ARC film63 is executed by using the RIE device (manufacturing apparatus 16) byRIE, using a mixed gas of carbon tetrafluoride (CF₄), oxygen (O₂), andhydrogen bromide (HBr) in a slimming RIE process in step S164. As shownin FIG. 4, a mask pattern 65 having resist patterns 64 a and ARCpatterns 63 a is formed. A mask width Ws of the mask pattern 65 ismeasured by the quality control apparatus 22 in a quality controlprocess in step S165.

(d) In a gate RIE process in step S166, as shown in FIG. 5, the poly-Sifilm 62 and the oxide film 61 are selectively removed by RIE or the likeby using the mask pattern 65 as a mask, to thereby form gate electrodes62 a and gate oxide films 61 a. A finished width Wp of the gateelectrode 62 a is measured by the quality control apparatus 22 in aquality control process in step S167.

In the existing slimming RIE process, for example, a slimming time iscalculated on the basis of a measured resist width Wr and a slimmingrate determined by slimming RIE executed immediately before thecalculation in order to control a desired mask width Ws with highaccuracy. However, as shown in FIG. 6, a slimming rate may vary among aplurality of wafers processed by the RIE device serving as themanufacturing apparatus 16. When a slimming rate varies, differences arebrought about in a slimming amount, which makes it difficult to controlthe mask width Ws. As a result, the finished width Wp of the gateelectrode 62 a varies, which deteriorates a process yield.

Now, explanation will be given to a case in which a process controlmethod according to the first embodiment of the present invention isapplied to the slimming RIE process described above by use of acorrelation between apparatus information and a feature quantity shownin FIG. 7, the timing charts of the manufacturing process shown in FIG.8 and FIG. 9, and the flowchart shown in FIG. 10.

(a) In step S100, the client computer 15 shown in FIG. 1 calculates aslimming rate for a feature quantity on the basis of quality controlmeasurement values such as a resist width Wr and a mask width Ws, and aprocessing time serving as a processing parameter in a slimming RIEprocess executed onto a reference wafer. A slimming rate with respect toa capacitor electrode position as apparatus information is, as shown inFIG. 7, approximated by a linear expression. A correlation equation ofthe slimming rate with respect to the capacitor electrode position istransmitted to the parameter processing unit 10. A correlation between afeature quantity and apparatus information may be approximated by apolynomial.

(b) In step S101, the process management server 12 calculates a slimmingtarget value in a slimming RIE process with reference to a resist widthWr of a finished form of the resist pattern 64 (processing objectivestructure) by a photolithography process executed on an objective wafer,and a design specification for the mask pattern 65. Further, a slimmingtarget time is calculated on the basis of the slimming target value withreference to a slimming rate at a wafer immediately before the objectivewafer. The calculated slimming target value and slimming target time aretransmitted to the manufacturing execution system 14. The manufacturingexecution system 14 prepares a processing recipe into which first andsecond setting values of processing time for the first and second stepsin the processing in the slimming RIE process are described, on thebasis of the slimming target value and slimming target time. As a firstsetting value Ta, a value which is less than the slimming target time,for example, half of the target value is described in the processingrecipe. As a second setting value, a difference between the slimmingtarget time and the first setting value Ta is described. Note that avariable may be described as a second setting value. The processingrecipe is transmitted to the parameter processing unit 10 and theapparatus control unit 20.

(c) In step S102, the first step of the slimming RIE is started in themanufacturing apparatus 16 in accordance with the processing recipetransmitted from the manufacturing execution system 14 to the apparatuscontrol unit 20. In step S103, as shown in FIG. 8, the processing stepis started after a preliminary step in the manufacturing process. Forexample, after a wafer is mounted on the RIE device, a chamber of theRIE device is evacuated and a processing gas is introduced into thechamber within a setup time Ts. The capacitor electrode position of thehigh-frequency oscillator matching circuit is set to a position standingready for high-frequency oscillation during the setup time Ts. After aprocessing gas flow rate and a pressure in the chamber are made stablewithin predetermined ranges, the capacitor electrode of thehigh-frequency oscillator matching circuit moves to an oscillationposition, and the processing step in the slimming RIE is started. Aprocessing time Tx for the processing step is made to be (Ta-Ts).

(d) In step S104, the apparatus information collection section 32collects a monitored value of the capacitor electrode position of themanufacturing apparatus 16 from the monitor unit 18 in accordance withthe collection conditions described in the processing recipe immediatelyafter starting the processing step. In step S105, the apparatus controlunit 20 determines whether or not an additional step is inserted. Whenthe setup time Ts is fortuitously made long, and a processing time forthe second step cannot be acquired within the processing time Tx by theapparatus control unit 20, the apparatus control unit 20 adds anadditional step for a processing time Tz to the rear of the first stepin step S106, as shown in FIG. 9. The additional step is executed afterthe first step in accordance with the rewritten processing recipe.

(e) In step S107, the feature quantity calculation section 36 calculatesa slimming rate corresponding to the monitored value of the capacitorelectrode position on the basis of the correlation between the capacitorelectrode position and the slimming rate shown in FIG. 7. In step S108,the parameter calculation section 38 calculates a second setting valueTy for a processing time for the second step on the basis of thecalculated slimming rate. The output section 40 transmits the calculatedsecond setting value Ty to the apparatus control unit 20. The apparatuscontrol unit 20 prepares a processing recipe with the second settingvalue Ty being as a setting value of the second step described already.The second step is executed following the first step in accordance withthe rewritten processing recipe. In this way, the objective wafer isprocessed by the slimming RIE process.

In accordance with the process control method according to the firstembodiment of the present invention, the processing of the second stepin the slimming RIE process is controlled on the basis of the slimmingrate calculated in the first step. As a result, control accuracy for afinished dimension of the gate electrode 62 a is improved, which candecrease logic products below standards. Accordingly, it is possible tocontrol the processing in the slimming RIE process with high accuracy,which makes it possible to improve the process capability and amanufacturing yield.

Modified Example

In a process control method according to a modified example of the firstembodiment of the invention, descriptions will be given by using amanufacturing process for a semiconductor device under the 0.13 μmdesign rule, for example, a DRAM mixed loading logic product as anexample. For ease of explanation, as an example of a manufacturingprocess to be controlled, there will be described a recess RIE processin which a part of an a-Si film embedded in a deep trench at a DRAMportion is removed to an arbitrary depth, with reference to the processflowchart of FIG. 11 and process cross-sectional views of FIG. 12 toFIG. 14.

(a) An oxide film 76 is formed on the surface of a substrate (wafer) 60by a thermal oxidation process in step S180. A nitride film 77 isdeposited on the oxide film 76 by an Si₃N₄CVD process in step S181.

(b) A mask pattern such as photo resist is formed on the nitride film 77in a photolithography process in step S182. In a deep trench RIE processin step S183, deep trenches are formed by selectively removing thenitride film 77, the oxide film 76, and the substrate 60.

(c) An oxide film 78 is deposited in a tetraethoxysilane (TEOS) CVDprocess in step S184. A trench width Wt of a deep trench (processingobjective structure) is measured in a quality control process in stepS185.

(d) In an a-SiCVD process in step S186, an a-Si film 79 is embedded inthe deep trenches as shown in FIG. 12. In a quality control process instep S187, a film thickness THa of the a-Si film 79 at the flat portiondeposited on the surface of the oxide film 78 on the nitride film 77 ismeasured.

(e) In a recess RIE process in step S188, as shown in FIG. 13, the a-Sifilm 79 is removed until the surface of the nitride film 77 is exposedwhile carrying out etching end-point detection by plasma spectroscopy orthe like. The recess RIE is continued for a processing time calculatedon the basis of the film thickness THa of the a-Si film 79 at the flatportion and an end-point detection time, so that some of the a-Si film79 is removed from the deep trenches to thereby form recesses at thedeep trenches, as shown in FIG. 14. A finished depth Da of the recess ismeasured in a quality control process in step S189.

In the process control method according to the modified example of thefirst embodiment of the present invention, the client computer 15 shownin FIG. 1 investigates a correlation between a chamber temperature asapparatus information and an etching rate of the recess RIE with respectto the deep trenches formed by the recess RIE process for a referencewafer in advance while changing the trench width Wt. The processmanagement server 12 calculates a target time for the recess RIE on thebasis of the film thickness THa of the a-Si film 79 at the flat portionof the objective wafer, a target value for a recess depth described inthe specification, and an etching rate obtained in the adjacent recessRIE process.

The manufacturing execution system 14 divides the processing recipe ofthe recess RIE into a flat portion processing step, a first step and asecond step. In the flat portion processing step, “end-point detection”denoting a time up to the end-point detection for the a-Si film 79 atthe flat portion is described. In the first step, a first setting valuefor a processing time not less than a processing time corresponding to arecess depth is described. As a second setting value, a differencebetween a target time for the recess RIE from which an etching time ontothe flat portion is subtracted and the first setting value is described.The processing recipe is transmitted to the parameter processing unit 10and the apparatus control unit 20.

The recess RIE process is started in accordance with the processingrecipe by the apparatus control unit 20. When the recess RIE process isstarted, the monitor unit 18 monitors apparatus information such asplasma spectroscopy and a chamber temperature. The apparatus informationcollection section 32 collects apparatus information in accordance withthe processing recipe acquired at the input section 30.

The feature quantity calculation section 36 calculates an etching rateof the recess RIE on the basis of the film thickness THa of the a-Sifilm 79 at the flat portion and the monitored end-point detection timeduring the recess RIE process for the objective wafer. The parametercalculation section 38 calculates a depth to be etched in the first stepand a second setting value of the second step on the basis of thecalculated etching rate in the recess RIE processing after the end-pointdetection of the a-Si film 79 at the flat portion. The output section 40transmits the second setting value to the apparatus control unit 20. Theapparatus control unit 20 rewrites the processing recipe by describingthe acquired second setting value as a setting value of the second step.

In order to control a recess depth more precisely, the apparatusinformation collection section 32 monitors a chamber temperature in thefirst step. The feature quantity calculation section 36 calculates anetching rate in the first step on the basis of a relationship between achamber temperature and an etching rate with respect to a trench widthWt of a deep trench. The parameter calculation section 38 calculates asecond setting value of the second step is calculated on the basis ofthe calculated etching rate in the first step and a specification valueof a recess depth. The output section 40 transmits the newly calculatedsecond setting value to the apparatus control unit 20. The apparatuscontrol unit 20 rewrites the newly acquired second setting value as asetting value of the second step.

In the process control method according to the modified example of thefirst embodiment of the present invention, a processing time for therecess RIE is calculated on the basis of the film thickness THa of thea-Si film 79 at the flat portion and an etching end-point detectiontime. Moreover, an etching rate at the first step in the recess RIEprocessing is calculated on the basis of a correlation between chambertemperature and etching rate with respect to a trench width Wt of a deeptrench. As a result, control accuracy of a finished recess depth at adeep trench is improved double, and a manufacturing yield can beimproved about 2%. Accordingly, the processing in the recess RIE processcan be controlled with high accuracy, which makes it possible to improvethe process capability and a manufacturing yield.

In the first embodiment of the present invention, as a control objectiveprocess, a RIE process such as slimming processing or recess processingis used. However, it may be, for example, a CVD process or the like as acontrol objective process. Further, the description has been given byusing a processing time as a control parameter. However, flow rate,pressure, temperature, or the like may be used as a control parameter.For example, when a flow rate is used as a control parameter, arelationship between a flow rate and a feature quantity is investigatedin advance. It suffices to calculate a flow rate corresponding to afeature quantity required in the second step on the basis of a featurequantity calculated in the first step with a processing time for theprocessing recipe being fixed. Further, finished dimensions such aswidth, depth, and film thickness of a pattern are used as a finishedform. However, a finished form is not limited to dimensions, and may bea processed form such as angles of pattern side walls and LER.

Second Embodiment

A process control system according to a second embodiment of the presentinvention comprises, as shown in FIG. 15, an apparatus informationcollection unit 13, a correlation preparation unit 11, a processmanagement unit 17, a manufacturing execution system 14, a manufacturingapparatus 16, a monitor unit 18, an apparatus control unit 20, a qualitycontrol apparatus 22, an apparatus information database 24, a qualitycontrol database 26, a control information database 28, and the like.Further, the process management unit 17 includes an input section 30, adetermination section 32, a feature quantity calculation section 34, atarget value calculation section 36, a parameter calculation section 38,an output section 40, and an internal memory 42.

The apparatus information collection unit 13, the correlationpreparation unit 11, the process management unit 17, the manufacturingexecution system 14, the apparatus control unit 20, the quality controlapparatus 22, the apparatus information database 24, the quality controldatabase 26, the control information database 28, etc. are connected toone another via communication lines 50 such as a local area network(LAN). The monitor unit 18 and the apparatus control unit 20 areconnected to the manufacturing apparatus 16. The monitor unit 18 isconnected to the apparatus information collection unit 13.

The apparatus information collection unit 13, the correlationpreparation unit 11, the process management unit 17, the manufacturingexecution system 14, and the apparatus control unit 20 may be configuredas a part of a central processing unit (CPU) of a usual computer system.The input section 30, the determination section 32, the feature quantitycalculation section 34, the target value calculation section 36, theparameter calculation section 38, and the output section 40 may beconfigured respectively of dedicated hardware, or may be software havingsubstantially equivalent functions by using a CPU of a usual computersystem.

For example, the manufacturing apparatus 16 is used to execute amanufacturing process of a semiconductor device under control of theapparatus control unit 20. The apparatus control unit 20 acquires fromthe manufacturing execution system 14 a processing recipe in whichprocessing conditions for the manufacturing process such as settingvalues of processing parameters of the manufacturing apparatus aredescribed. Examples of the manufacturing apparatus 16 include a reactiveion etching (RIE) device, a chemical vapor deposition (CVD) device, adeposition device, an ion implantation device, and a photolithographysystem. Examples of processing parameters include time, temperature,flow rate, pressure, etc.

Further, the monitor unit 18 provided for the manufacturing apparatus 16monitors apparatus information indicating a processing state of themanufacturing apparatus 16 in operation for the manufacturing process. Aposition detector, a power meter, a thermometer, a flowmeter, a pressuregage, and the like are included in the monitor unit 18. Examples ofapparatus information include, in a case of an RIE device, upperelectrode position of a variable capacitor of a high-frequencyoscillator matching circuit (hereinafter referred to as a capacitorelectrode position), traveling wave power, reflected wave power, chambertemperature, opening of an exhaust valve, gas flow rate, pressure, etc.

After the manufacturing apparatus 16 starts the processing of themanufacturing process in accordance with the processing recipe undercontrol of the apparatus control unit 20, the apparatus informationcollection unit 13 collects monitored values of the apparatusinformation of the manufacturing apparatus 16 from the monitor unit 18in accordance with the collection conditions described in the processingrecipe. The apparatus information are stored in the apparatusinformation database 24 after lot numbers and wafer numbers ofsemiconductor devices processed in the manufacturing apparatus 16 areadded to the apparatus information. The apparatus information areacquired with respect to all the lots processed in the manufacturingapparatus 16.

The quality control apparatus 22 measures quality control measurementvalues of finished forms and the like-after a plurality of manufacturingprocesses are respectively completed executed at the manufacturingapparatus 16 and the like. Examples of the quality control apparatus 22include a scanning electron microscope (SEM), a laser microscope, a stepmeter, and a film thickness meter. Examples of quality controlmeasurement values include finished dimensions such as width of a resistpattern formed by photolithography or the like, width and a depth of apattern which is etched by RIE, and thickness of a film deposited byCVD. Further, processed forms such as sidewall angles, line edgeroughness (LER), and skirt shape of a resist pattern or a line patternformed by using or a resist pattern as a mask are included in thequality control measurement values. Quality control data includingquality control measurement values measured in the quality controlapparatus 22, and the like are stored in the quality control database 24along with lot numbers, wafer numbers, processing time, and settingvalues of other processing parameters. The quality control measurementis not executed on all the wafers, but is executed on representativewafers in a lot.

The correlation preparation unit 11 investigates a correlation betweenapparatus information and a feature quantity in the manufacturingprocess in advance. For example, the correlation preparation unit 11calculates a feature quantity on the basis of a processing time in atest manufacturing process with respect to a test wafer and qualitycontrol measurement values. A correlation equation between thecalculated feature quantity and the apparatus information monitored inthe test manufacturing process is prepared. As a feature quantity, forexample, a slimming rate or an etching rate in RIE or the like, asedimentation rate in CVD or the like, and the like are calculated. Thecorrelation is stored in the control information database 28.

The input section 30 of the process management unit 17 acquiresmonitored values of apparatus information, quality control measurementvalues, and a processing time, and the like, from the apparatusinformation database 24 and the quality control database 26, by using,as indexes, lot numbers and wafer numbers of a plurality of referencewafers in a reference lot onto which the manufacturing process has beenexecuted in advance in the manufacturing apparatus 16. Further, theinput section 30 of the process management unit 17 acquires from thequality control database 26 the quality control measurement valuesrelating to a finished form of a processing objective structure in anobjective manufacturing process among finishes of the manufacturingprocesses which have been executed before an objective manufacturingprocess.

The determination section 32 determines an abnormal wafer from amongreference wafers on the basis of an abnormal value appearing in adistribution of monitored values of the apparatus information of theplurality of reference wafers. With respect to a normal wafer in whichmonitored values of the apparatus information appear within a range of adistribution of the monitored values, a finished form within anallowable range stipulated by a specification of a referencemanufacturing process is obtained.

The feature quantity calculation section 34 calculates a plurality ofestimated values for a feature quantity corresponding to monitoredvalues of the apparatus information with respect to a plurality ofreference wafers except for abnormal wafers, on the basis of acorrelation between apparatus information and a feature quantity.

The target value calculation section 36 calculates a target value forthe processing on the basis of the quality control measurement values ofa processing objective structure of an objective wafer on the basis ofthe specification for a finished form of the objective manufacturingprocess.

The parameter calculation section 38 calculates at least one of theplurality of estimated values for a feature quantity and a setting valueof a processing parameter in the objective manufacturing process on thebasis of the dimensions of the processing objective structure in theobjective manufacturing process for the objective wafer. For example, anaverage value of the plurality of estimated values for a feature,quantity of a normal wafer in the reference lot is calculated. Aprocessing parameter in the objective manufacturing process iscalculated by use of a shape of the processing objective structure ofthe objective wafer measured by the quality control apparatus 22, and anaverage value of the estimated values. One or more lots executedimmediately before the objective lot are used as the reference lots.

The output section 40 transmits the calculated setting value of aprocessing parameter to the manufacturing execution system 14.

The internal memory 42 temporarily stores data in process of calculatingor in process of analyzing in an operation in the process managementunit 17.

The manufacturing execution system 14 acquires a process specificationfor the objective manufacturing process stored in advance in the controlinformation database 28, and prepares a processing recipe by describinga setting value of a processing parameter into a processing step of theobjective manufacturing process. Further, in the processing recipe,there are described items of the apparatus information to be monitored,collection conditions for the apparatus information such as a samplingrate, a computational procedure of a feature quantity in themanufacturing process, and the like. The processing recipe istransmitted to the apparatus information collection unit 13 and theapparatus control unit 20.

The apparatus control unit 20 controls the objective manufacturingprocess executed in the manufacturing apparatus 16 with respect to theobjective wafer in accordance with the received processing recipe.

In accordance with the process control system according to the secondembodiment of the present invention, an abnormal wafer is determined byuse of monitored values of apparatus information acquired with respectto all of reference wafers. A processing parameter in the manufacturingprocess is calculated on the basis of estimated values for a featurequantity of normal wafers except for abnormal wafers. As a result, theprocessing in the manufacturing process can be controlled with highaccuracy, which makes it possible to improve the process capability anda manufacturing yield.

In the second embodiment of the present invention, a semiconductordevice under the 90 nm design rule, for example, a logic product ismanufactured. For ease of explanation, as an example of a manufacturingprocess to be controlled, there will be described a slimming RIE processin which a width of a resist pattern of a gate electrode forming etchingmask of a metal-oxide-semiconductor (MOS) transistor is reduced, withreference to the process flowchart of FIG. 2 and the processcross-sectional views of FIG. 3 to FIG. 5. A gate length as a gateprocessed dimension of the MOS transistor is 40 nm.

(a) An oxide film 61 of silicon oxide (SiO₂) or the like is formed on asubstrate (wafer) 60 by thermal oxidation or the like. A poly-Si film 62is deposited on the oxide film 61 by a polycrystalline silicon (poly-Si)chemical vapor deposition (CVD) process in step S160. An ARC(antireflection coating) film 63 of silicon oxynitride (SiON), siliconnitride (Si₃N₄), titanium nitride (TiN), or the like is deposited on thepoly-Si film 62 by an ARCCVD process in step S161. In place of theARCCVD process, the ARC film 63 may be applied onto the poly-Si film 62by an antireflection coating process.

(b) As shown in FIG. 3, a resist pattern 64 is formed on a surface ofthe ARC film 63, using a photolithography process in step S162. A resistwidth Wr of the resist pattern 64 is measured by the quality controlapparatus 22 such as an SEM in a quality control process in step S163.

(c) Etching onto the resist pattern 64 and the ARC film 63 (slimmingRIE) is executed by use of the RIE device (manufacturing apparatus 16)by RIE or the like using a mixed gas of carbon tetrafluoride (CF₄),oxygen (O₂), and hydrogen bromide (HBr) in a slimming RIE process instep S164, so that a mask pattern 65 having resist patterns 64 a and ARCpatterns 63 a is formed, as shown in FIG. 4. A mask width Ws of the maskpattern 65 is measured by the quality control apparatus 22 in a qualitycontrol process in step S165.

(d) In a gate RIE process in step S166, the poly-Si film 62 and theoxide film 61 are selectively removed by RIE or the like by using themask pattern 65 as a mask, to thereby form the gate electrodes 62 a andthe gate oxide films 61 a, as shown in FIG. 5. A finished width Wp ofthe mask electrode 62 a is measured by the quality control apparatus 22in a quality control process in step S167.

In the existing slimming RIE process, for example, a slimming rate iscalculated on the basis of the results of quality control measurement inthe slimming RIE process executed onto a plurality of wafers in order tocontrol a desired mask width Ws with high accuracy. A slimming time iscalculated on the basis of a resist width Wr measured with respect tothe objective wafer and a determined slimming rate. However, some of theplurality of wafers processed in the RIE device may be made to beabnormal wafers showing abnormal values whose slimming rates excess anallowable range. When quality control measurement includes abnormalwafers, a calculated slimming rate is made inaccurate, which makes itdifficult to control the mask width Ws. As a result, the finished widthWp of the gate electrodes 62 a gets out of the control range, whichdeteriorates a process yield.

Now, explanation will be given to a case in which the process controlmethod according to the second embodiment of the present invention isapplied to the slimming RIE process described above with reference to acorrelation between apparatus information and a feature quantity shownin FIG. 16, and the flowchart shown in FIG. 17.

(a) In step S100, the correlation preparation unit 11 of the systemshown in FIG. 15 acquires from the quality control database 26 qualitycontrol measurement values such as the resist width Wr and the maskwidth Ws, and a processing time serving as a processing parameter in theslimming RIE process executed onto the reference wafers. A slimming ratefor a feature quantity is calculated on the basis of the quality controlmeasurement values and the processing parameter. For example, as shownin FIG. 16, a slimming rate with respect to a capacitor electrodeposition as apparatus information is approximated by a linearexpression. A correlation equation of a feature quantity with respect toapparatus information is stored in the control information database 28.

(b) In step S101, the input section 30 acquires from the apparatusinformation database 24 monitored values of apparatus informationmonitored during the processing step of the slimming RIE onto theplurality of reference wafers. Further, a correlation between apparatusinformation and a feature quantity is acquired from the controlinformation database 28.

(c) In step S102, the determination section 32 determines an abnormalwafer on the basis of an abnormal value appearing in a distribution ofmonitored values of the apparatus information of the reference wafers.

(d) In step S103, the feature quantity calculation section 34 calculatesestimated values for a slimming rate for a feature quantitycorresponding to the monitored values of the apparatus informationexcept for abnormal values, on the basis of a correlation betweenapparatus information and a feature quantity. With respect to thereference wafers onto which quality control measurement has beenexecuted, a value of a slimming rate calculated on the basis of qualitycontrol measurement values acquired from the quality control database 26and a processing parameter may be used to be replaced with an estimatedvalue.

(e) In step S104, the quality control apparatus 22 measures a resistwidth Wr of a finished form of the resist pattern 64 (processingobjective structure) by a photolithography process executed onto anobjective wafer, and the measured resist width Wr is stored as a qualitycontrol measurement value in the quality control database 26. The resistwidth Wr and a design specification for the mask pattern 65 arerespectively acquired from the quality control database 26 and thecontrol information database 28 by the input section 30 of the processmanagement unit 17. The target value calculation section 36 calculates aslimming target value in the slimming RIE process with reference to theresist width Wr and the design specification for the mask pattern 65.

(f) In step S105, the parameter calculation section 38 calculates aslimming time as a processing parameter on the basis of a slimmingtarget value by using an average value of the estimated values for aslimming rate. The calculated slimming time is transmitted to themanufacturing execution system 14 via the output section 40.

(g) A processing recipe is prepared by describing the acquired slimmingtime as a setting value of a processing time in the slimming RIE processby the manufacturing execution system 14. The processing recipe istransmitted to the apparatus information collection unit 13 and theapparatus control unit 20. The processing of the slimming RIE is startedin the manufacturing apparatus 16 in accordance with the processingrecipe transmitted from the manufacturing execution system 14 to theapparatus control unit 20.

In accordance with the process control method according to the secondembodiment of the present invention, monitored values of apparatusinformation acquired with respect to all of reference wafers are used asestimated values for a slimming rate. Accordingly, it is possible todetermine an abnormal wafer showing an abnormal value among thereference wafers. A processing time in the slimming RIE process iscalculated on the basis of the estimated values for a slimming rate ofnormal wafers except for abnormal wafers. As a result, control accuracyfor a finished dimension of the gate electrode 62 a is improved, whichcan decrease logic products below standards. Consequently, it ispossible to control the processing in the slimming RIE process with highaccuracy, which makes it possible to improve the process capability anda manufacturing yield.

In the above-described descriptions, the case in which the manufacturingprocess is carried out by lot processing has been described. However,the manufacturing process may be sheet processing. In a case of sheetprocessing, it suffices to use an estimated value of a slimming rate fora normal wafer processed immediately before the objective manufacturingprocess. In addition, an average value of estimated values of a slimmingrate for a plurality of normal wafers processed immediately before theobjective manufacturing process may be used.

In the present embodiment of the invention, as a control objectiveprocess, a RIE process such as slimming processing or recess processingis used. However, it may be, for example, a CVD process or the like as acontrol objective process. Further, the description has been given byusing a processing time as a control parameter. However, flow rate,pressure, temperature, or the like may be used as a control parameter.For example, when a flow rate is used as a control parameter, arelationship between a flow rate and a feature quantity is investigatedin advance. It suffices to calculate a flow rate corresponding to afeature quantity required in the objective manufacturing process on thebasis of an estimated value of a feature quantity calculated in thereference manufacturing process with a processing time for theprocessing recipe being fixed.

In addition, a correlation between apparatus information and a featurequantity is approximated, using a monomial. However, a feature quantitymay depend on plural apparatus information. In such a case, acorrelation of a feature quantity with respect to plural items ofapparatus information is approximated by a polynomial.

Third Embodiment

A process control system according to a third embodiment of the presentinvention comprises, as shown in FIG. 18, an apparatus informationcollection unit 13, a correlation preparation unit 11, a processmanagement unit 17 a, a manufacturing execution system 14, amanufacturing apparatus 16, a monitor unit 18, an apparatus control unit20, a quality control apparatus 22, an apparatus information database24, a quality control database 26, a control information database 28,and the like. Further, the process management unit 17 a includes aninput section 30, a determination section 32, a classification section33, a feature quantity calculation section 34, a target valuecalculation section 36, a parameter calculation section 38, an outputsection 40, and an internal memory 42.

The process control system according to the third embodiment of thepresent invention is different from the first embodiment in that theclassification section 33 is provided in the process management unit 17a. Because the other configurations are the same as those in the firstembodiment, overlapped descriptions will be omitted.

For example, the RIE device forms different adherents or matters on thewall surface of a processing chamber in a manufacturing process executedin accordance with a processing recipe different from a processingrecipe in the objective manufacturing process. In a manufacturingprocess executed immediately after the manufacturing process inaccordance with the different processing recipe, an atmosphere in theprocessing chamber is changed during the processing due todegasification from the adherents or matters on the wall surface of theprocessing chamber. As a result, a monitored value of apparatusinformation is deviated from a normal value to be an abnormal value.Further, an etching rate serving as a feature quantity, and a finishedform by the manufacturing process vary.

In a manufacturing process executed under certain conditions asdescribed above, an abnormal value of apparatus information appears at agiven distribution position shifted from a distribution position ofnormal monitored values with favorable reproducibility. In addition,variations in an etching rate, a finished form, and the like arereproduced.

For example, as shown in FIG. 19, in a normal wafer, monitored values ofapparatus information distribute in a region A. Estimated values for afeature quantity of a normal wafer distribute in a region including astraight line approximating a correlation between apparatus informationand a feature quantity within a range corresponding to the region A.Further, abnormal values of apparatus information obtained in amanufacturing process executed under certain conditions distribute in aregion B with favorable reproducibility. Estimated values for a featurequantity calculated on the basis of quality control measurement valuesalso distribute within a given range so as to correspond to the region Bof apparatus information.

The classification section 33 of the process management unit 17 aclassifies abnormal values reproduced by a distribution region appearingin abnormal values of apparatus information determined by thedetermination section 32, into the abnormal mode corresponding to thedistribution region. For example, an abnormal wafer that an abnormalvalue of apparatus information appears in the region B is classifiedinto the abnormal mode corresponding to the region B, and is stored inthe control information database 28. When abnormal values of apparatusinformation appear in not only the region B but also a plurality ofregions, the respective abnormal values are classified into a pluralityof abnormal modes corresponding to the plurality of regions.

The correlation preparation unit 11 investigates a correlation betweenapparatus information and a feature quantity with respect to theabnormal mode corresponding to the region B. As shown in FIG. 19, a newapproximate expression of a correlation between apparatus informationand a feature quantity with respect to the abnormal mode is prepared.The correlation in the abnormal mode is stored in the controlinformation database 28.

In the third embodiment of the present invention, the manufacturingexecution system 14 prepares a processing recipe in such a manner thatthe processing of an objective manufacturing process is divided intofirst and second steps. In the first and second steps, there aredescribed first and second setting values obtained by dividing a valueof a processing time calculated by using a normal wafer in the parametercalculation section 38 of the process management unit 17 a into twovalues. A processing parameter is transmitted to the apparatus controlunit 20 and the apparatus information collection unit 13.

During the processing of the first step in the manufacturing process inthe manufacturing apparatus 16, monitored values of apparatusinformation collected by the apparatus information collection unit 13are transmitted to the process management unit 17 a in real time. Whenthe determination section 32 determines a monitored value of apparatusinformation as normal, the processings of the first and second steps inthe processing recipe are executed in accordance with the processingrecipe.

When a monitored value of apparatus information is determined asabnormal, the classification section 33 classifies the abnormal value ofapparatus information, and determines whether or not it corresponds tothe abnormal mode. When it is determined as the abnormal mode, thefeature quantity calculation section 34 reads out a correlation in theabnormal mode from the control information database 28, and calculatesan estimated value of a feature quantity. The parameter calculationsection 38 calculates a new setting value of the processing parameter onthe basis of the estimated value of the feature quantity correspondingto the abnormal mode. The apparatus control unit 20 changes theprocessing parameter of the second step in the processing recipe on thebasis of the new setting value received from the output section 40.

In accordance with the process control system according to the thirdembodiment of the present invention, a monitored value of apparatusinformation is classified on the basis of the abnormal value when it isdetermined as an abnormal value. In an abnormal wafer classified intothe abnormal mode, the processing of the second step in themanufacturing process is controlled by using an estimated value of afeature quantity calculated on the basis of a correlation in theabnormal mode. Accordingly, the processing in the manufacturing processcan be controlled with high accuracy, which makes it possible to improvethe process capability and a manufacturing yield.

Now, explanation will be given to a case in which the process controlmethod according to the third embodiment of the present invention isapplied to the slimming RIE process shown in FIG. 2 to FIG. 5 withreference to the flowchart shown in FIG. 20

(a) In step S200, the correlation preparation unit 11 shown in FIG. 18calculates a slimming rate for a feature quantity on the basis ofquality control measurement values such as a resist width Wr and a maskwidth Ws, and a processing time serving as a processing parameter in theslimming RIE process executed onto a test wafer. The correlation of afeature quantity with respect to the apparatus information istransmitted to the control information database 28.

(b) In step S201, the input section 30 acquires from the apparatusinformation database 24 monitored values of the apparatus informationmonitored during the processing step of the slimming RIE onto thereference wafers. Further, a correlation between apparatus informationand a feature quantity is acquired from the control information database28.

(c) In step S202, the determination section 32 determines abnormalwafers whose monitored values of apparatus information are made abnormalamong the reference wafers.

(d) When it is determined as an abnormal wafer, the classificationsection 33 classifies, in step S203, the abnormal wafers having abnormalvalues reproduced by a distribution region appearing in abnormal valuesinto the abnormal mode.

(e) In step S204, the correlation preparation unit 11 prepares acorrelation between apparatus information and a feature quantity by useof a calculated value of a feature quantity and monitored values ofapparatus information with respect to the abnormal wafers in theabnormal mode classified to have reproducibility of correlation.

(f) Among the normal wafers except for the abnormal wafers, the featurequantity calculation section 34 calculates, in step S205, an estimatedvalue of a slimming rate for a feature quantity corresponding to themonitored values of apparatus information on the basis of thecorrelation between apparatus information and a feature quantity. Theinput section 30 of the process management unit 17 a acquires the resistwidth Wr of the resist pattern 64 (processing objective structure) and adesign specification for the mask pattern 65 from the quality controldatabase 26 and the control information database 28, respectively. Thetarget value calculation section 36 calculates a slimming target valuein the slimming RIE process with reference to the resist width Wr andthe design specification for the mask pattern 65.

(g) In step S206, the parameter calculation section 38 calculates aslimming time as a processing parameter on the basis of the slimmingtarget value by use of an average value of the estimated values of aslimming rate for a normal wafer. The calculated slimming time istransmitted to the manufacturing execution system 14 via the outputsection 40.

(h) In step S207, the manufacturing execution system 14 prepares aprocessing recipe in such a manner that the processing step in theobjective manufacturing process is divided into a first step and asecond step. First and second setting values obtained by dividing thevalue of the received slimming time into two values are described in thefirst and second steps. The processing recipe is transmitted to theapparatus information collection unit 13 and the apparatus control unit20.

(i) In step S208, the first step of the slimming RIE is started with thefirst setting value in the manufacturing apparatus 16 in accordance withthe processing recipe under control of the apparatus control unit 20.

(j) In step S209, at the same time as the first step is started, theapparatus information collection unit 13 collects the apparatusinformation monitored on the monitor unit 18. The monitored values ofthe apparatus information are transmitted to the process management unit17 a in real time.

(k) In step S210, the determining section 32 determines whether or notthe monitored values of the apparatus information are normal values.When a monitored value is a normal value, the second step is processedwith the second setting value in step S211 following the first step.

(l) When a monitored value of apparatus information is an abnormalvalue, the classification section 33 classifies the abnormal value instep S212, and it is determined whether or not it is the abnormal modewith reproducibility. When it is not the abnormal mode withreproducibility, the running of the processing recipe is aborted in stepS213. Thereafter, the following handling is determined by analyzing theabnormal cause.

(m) When it is the abnormal mode with reproducibility, the featurequantity calculation section 34 calculates, in step S214, an estimatedvalue of a feature quantity on the basis of a correlation betweenapparatus information and a feature quantity in the abnormal mode. Theparameter calculation section 38 calculates a new setting value as aprocessing parameter on the basis of the estimated value of a featurequantity corresponding to the abnormal mode. The new setting value as aprocessing parameter is transmitted to the apparatus control unit 20.

(n) In step S215, the apparatus control unit 20 changes the secondsetting value of the second step in the processing recipe on the basisof the new setting value as a processing parameter.

In accordance with the process control method according to the thirdembodiment of the present invention, the processing of the second stepin the slimming RIE process in a wafer in which an abnormal value isdetected is controlled on the basis of a slimming rate calculated on thebasis of the abnormal value during the process of the first step. As aresult, control accuracy for a finished dimension of the gate electrode62 a is improved, which can decrease logic products below standards. Inthis way, it is possible to control the processing in the slimming RIEprocess with high accuracy, which makes it possible to improve theprocess capability and a manufacturing yield.

In the present embodiment of the invention, as a control objectiveprocess, a RIE process such as slimming processing or recess processingis used. However, it may be, for example, a CVD process or the like as acontrol objective process. Further, the description has been given byusing a processing time as a control parameter. However, flow rate,pressure, temperature, or the like may be used as a control parameter.For example, when a flow rate is used as a control parameter, arelationship between a flow rate and a feature quantity is investigatedin advance. It suffices to calculate a flow rate corresponding to afeature quantity required in the objective manufacturing process on thebasis of an estimated value of a feature quantity calculated in thereference manufacturing process with a processing time for theprocessing recipe being fixed.

In addition, a correlation between apparatus information and a featurequantity is approximated, using a monomial. However, a feature quantitymay depend on plural apparatus information. In such a case, acorrelation of a feature quantity with respect to plural items ofapparatus information is approximated by a polynomial.

It will be understood from the explanations as above that the presentinvention may be applied to a method of manufacturing a liquid crystalapparatus, a magnetic recording medium, an optical recording medium, athin film magnetic head, a superconducting device, and the like.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcept as defined by the appended claims and their equivalents.

1. A process control system comprising: a client computer which preparesa correlation between a reference monitored value of apparatusinformation indicating a processing state of a manufacturing apparatusin a reference manufacturing process with respect to a reference wafer,and a feature quantity obtained from a control parameter for controllingthe manufacturing apparatus and a finished form in the referencemanufacturing process; a manufacturing execution system which prepares aprocessing recipe describing, as a first setting value of a first stepin an actual manufacturing process with respect to an objective wafer, avalue of the control parameter calculated on the basis of a dimension ofa processing objective structure in the actual manufacturing process; anapparatus information collection section which collects an objectivemonitored value of the apparatus information from the manufacturingapparatus in operation of the actual manufacturing process with thefirst setting value; a feature quantity calculation section whichcalculates a value of a feature quantity corresponding to the objectivemonitored value on the basis of the correlation; a parameter calculationsection which calculates a second setting value of a second step in theactual manufacturing process following the first step of the actualmanufacturing process on the basis of the value of the feature quantitycorresponding to the objective monitored value; and an apparatus controlunit which changes the processing recipe with the second setting valuebeing as a setting value of the second step.
 2. The process controlsystem according to claim 1, wherein the apparatus control unit changesthe processing recipe by adding an additional step to the first stepwhen the second setting value is not acquired until the first step iscompleted.
 3. The process control system according to claim 1, whereinthe processing parameter includes a time, a temperature, a flow rate,and a pressure.
 4. The process control system according to claim 1,wherein the finished form includes finished dimensions of a width and adepth of a pattern, a finished dimension of a thickness of the pattern,an angle of a sidewall of the pattern, and a line edge roughness of thepattern. 5.-8. (canceled)
 9. A process control method comprising:preparing, by a client computer, a correlation between a referencemonitored value of apparatus information indicating a processing stateof a manufacturing apparatus in a reference manufacturing process withrespect to a reference wafer, and a feature quantity obtained from acontrol parameter for controlling the manufacturing apparatus and afinished form in the reference manufacturing process; preparing, by amanufacturing execution system, a processing recipe describing, as asetting value of a first step in an actual manufacturing process withrespect to an objective wafer, a first setting value of the controlparameter calculated on the basis of a dimension of a processingobjective structure in the actual manufacturing process; collecting, byan apparatus information collection section, an objective monitoredvalue of the apparatus information from the manufacturing apparatus inoperation of the actual manufacturing process with the first settingvalue; calculating, by a feature quantity calculation section, a valueof a feature quantity corresponding to the objective monitored value onthe basis of the correlation; calculating, by a parameter calculationsection, a second setting value of a second step in the actualmanufacturing process following the first step in the actualmanufacturing process on the basis of the value of the feature quantitycorresponding to the objective monitored value; and changing, by anapparatus control unit, the processing recipe with the second settingvalue being as a setting value of the second step.
 10. The processcontrol method according to claim 9, further comprising: changing, bythe apparatus control unit, the processing recipe by adding anadditional step to the first step when the second setting value is notacquired until the first step is completed.
 11. The process controlmethod according to claim 9, wherein the processing parameter includes atime, a temperature, a flow rate, and a pressure.
 12. The processcontrol method according to claim 9, wherein the finished form includesfinished dimensions of a width and a depth of a pattern, a finisheddimension of a thickness of the pattern, an angle of a sidewall of thepattern, and a line edge roughness of the pattern. 13.-16. (canceled)17. A method of manufacturing an electronic apparatus, comprising:preparing, by executing a reference manufacturing process onto areference wafer, a correlation between a reference monitored value ofapparatus information indicating a processing state of a manufacturingapparatus, and a feature quantity obtained from a control parameter forcontrolling the manufacturing apparatus and a finished form in thereference manufacturing process; preparing a processing recipedescribing, as a first setting value of a first step in an actualmanufacturing process with respect to an objective wafer, a value of thecontrol parameter calculated on the basis of a dimension of a processingobjective structure in the actual manufacturing process; collecting anobjective monitored value of the apparatus information from themanufacturing apparatus in operation of the actual manufacturing processwith the first setting value; calculating a value of a feature quantitycorresponding to the objective monitored value on the basis of thecorrelation; calculating a second setting value of a second step in theactual manufacturing process following the first step in the actualmanufacturing process on the basis of the value of the feature quantitycorresponding to the objective monitored value; changing the processingrecipe with the second setting value being as a setting value of thesecond step; and processing the objective lot by the manufacturingapparatus.
 18. The method of manufacturing an electronic apparatusaccording to claim 17, wherein the processing parameter includes a time,a temperature, a flow rate, and a pressure. 19.-20. (canceled)